semiconductor group 1 02.95 1550 nm laser in coaxial package with sm-pigtail, low power stl 81004x stl 81005x designed for application in fiber-optic networks laser diode with multi-quantum well structure suitable for bit rates up to 1 gbit/s ternary photodiode at rear mirror for monitoring and control of radiant power hermetically sealed subcomponent, similar to to 18 sm pigtail with optional flange type ordering code connector/flange stl 81004h q62702-pxxxx fc / without flange stl 81004a q62702-pxxxx din / without flange stl 81005h q62702-pxxxx fc / with flange stl 81005a q62702-pxxxx din / with flange component with other connector types on request. maximum ratings output power ratings refer to the sm fiber output. the operating temperature of the submount is identical to the case temperature. parameter symbol values unit module operating temperature range at case t c - 40 ? + 85 c storage temperature range t stg - 40 ? + 85 c soldering temperature t max = 10 s, 2 mm distance from bottom edge of case t s 260 c
stl 81004x stl 81005x semiconductor group 2 maximum ratings (contd) parameter symbol values unit laser diode direct forward current i f max 120 ma radiant power cw f e 1 mw reverse voltage v r max 2 v monitor diode reverse voltage v r max 10 v characteristics all optical data refer to a coupled 10/125 m m sm fiber, t c = 25 c. parameter symbol values unit laser diode optical output power f e > 0.4 mw emission wavelength center of range f e = 0.2 mw l 1510 ? 1590 nm spectral bandwidth f e = 0.2 mw (rms) d l < 5 nm threshold current ( - 40 ? + 85 c) i th 8 ? 60 ma forward voltage f e = 0.2 mw v f < 1.5 v radiant power at threshold f eth < 10 w slope efficiency h 8 ? 60 mw/a differential series resistance r s < 8 w rise time/fall time t r , t f < 1 ns monitor diode dark current, v r = 5 v, f e = 0 i r < 500 na photocurrent, f e = 0.2 mw i p 100 ? 1000 a
stl 81004x stl 81005x semiconductor group 3 laser diode radiant power in singlemode fiber relative radiant power f e = f ( l ) 0 100 200 300 400 0 10203040 forward current in ma optical power in mikrow 0 10 20 30 40 50 60 70 80 90 100 1546 1548 1550 1552 1554 wavelength in nm relative optical power laser forward current i f = f ( v f ) monitor diode dark current i r = f ( t a ) f p ort = 0, v r = 5 v 0 10 20 30 40 50 60 70 80 90 100 0 0.4 0.8 1.2 1.6 forward voltage in v forward current in ma 0.01 0.1 1 10 100 1000 -50 0 50 100 temperature in c dark current in na
stl 81004x stl 81005x semiconductor group 4 package outlines (dimensions in mm) stl 81004x stl 81005x
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